Details
Radiation Effects in Silicon Carbide
1. Aufl.
100,00 € |
|
Verlag: | Materials Research Forum LLC |
Format: | |
Veröffentl.: | 01.01.2017 |
ISBN/EAN: | 9781945291111 |
Sprache: | englisch |
Anzahl Seiten: | 172 |
Dieses eBook enthält ein Wasserzeichen.
Beschreibungen
The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Keywords: Silicon Carbide, Defects, Carrier Recombination, Annealing, Detectors, Electron Irradiation, Neutron Irradiation, Ion Irradiation.