Details
Point Defects in Group IV Semiconductors
common structural and physico-chemical aspects1. Aufl.
95,00 € |
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Verlag: | Materials Research Forum LLC |
Format: | |
Veröffentl.: | 01.01.2017 |
ISBN/EAN: | 9781945291234 |
Sprache: | englisch |
Anzahl Seiten: | 134 |
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Beschreibungen
This book focuses on the properties of defects in group IV semiconductors and, using a physico-chemical approach, aims to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. Also discussed is the need for further experimental and theoretical research. Keywords: Point Defects in Silicon, Point Defects in Germanium, Point Defects in Diamond, Point Defects in Silicon Carbides, Point Defect-Impurity Complexes, Defect Modeling, Self-Diffusion, Impurity Diffusion.